4GB DDR3-1600 SODIMM Silicon Power, PC12800, CL11, 512Mx8 8Chips, 1.5V https://m9.by
  • 4GB DDR3-1600 SODIMM  Silicon Power, PC12800, CL11, 512Mx8 8Chips, 1.5V
4GB DDR3-1600 SODIMM Silicon Power, PC12800, CL11, 512Mx8 8Chips, 1.5V, bulk
Default
Tip de dispozitiv Оперативная память
Marca Silicon Power
Factorul de formă SO-DIMM
Tipul de memorie DDR3
Dimensiunea RAM 4Gb
Frecvența memoriei 1600
Numărul de sloturi de memorie Single

Spune-ţi opinia

Notă: Codul HTML este citit ca şi text!
    Rău           Bun

4GB DDR3-1600 SODIMM Silicon Power, PC12800, CL11, 512Mx8 8Chips, 1.5V

  • Producător: Silicon Power
  • Cod furnizor: 1533-00023139
  • Disponibilitate: În Stoc!
  • 514 MDL


Etichete: 4GB DDR3-1600 SODIMM Silicon Power, PC12800, CL11, 512Mx8 8Chips, 1.5V

Recomandări

PSU XILENCE XP650R9, 650W, "Performance X" Series, ATX 2.4, 80 PLUS® Gold, Active PFC, 135mm fan

PSU XILENCE XP650R9, 650W, "Performance X" Series, ATX 2.4, 80 PLUS® Gold, Active PFC, 135mm fan

PSU XILENCE XP650R9, 650W, "Performance X" Series, ATX 2.4, 80 PLUS® Gold, Active PFC, 135mm fan,+12..

1.679 MDL

2.5" SSD 480GB  GOODRAM CL100 Gen.3, SATAIII, Sequential Reads: 540 MB/s, Sequential Writes: 460 MB/s, Thickness- 7mm, Controller Marvell 88NV1120, 3D NAND TLC

2.5" SSD 480GB GOODRAM CL100 Gen.3, SATAIII, Sequential Reads: 540 MB/s, Sequential Writes: 460 MB/s, Thickness- 7mm, Controller Marvell 88NV1120, 3D NAND TLC

2.5" SSD 480GB GOODRAM CL100 Gen.3, SATAIII, Sequential Reads: 540 MB/s, Sequential Writes: 460 MB/..

1.200 MDL